? semiconductor components industries, llc, 2012 september, 2012 ? rev. 2 1 publication order number: NGB8245N/d NGB8245N ignition igbt 20 a, 450 v, n ? channel d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil ? on ? plug and driver ? on ? coil applications ? d 2 pak package offers smaller footprint for increased board space ? gate ? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? low threshold voltage for interfacing power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? this is a pb ? free device applications ? ignition systems maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ces 500 v collector ? gate voltage v cer 500 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate current i g 1.0 ma transient gate current (t 2 ms, f 100 hz) i g 20 ma esd (charged ? device model) esd 2.0 kv esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 500 v total power dissipation @ t c = 25 c derate above 25 c p d 150 1.0 w w/ c operating & storage temperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 20 a, 450 v v ce(on) 1.24 v @ i c = 15 a, v ge 4.0 v c e g r g device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com r ge NGB8245Nt4g d 2 pak (pb ? free) 800 / tape & reel d 2 pak case 418b style 4 marking diagram ngb 8245ng ayww 1 gate 3 emitter 4 collector 2 collector NGB8245N = device code a = assembly location y = year ww = work week g = pb ? free package 1
NGB8245N http://onsemi.com 2 unclamped collector ? to ? emitter avalanche characteristics characteristic symbol value unit single pulse collector ? to ? emitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 9.5 a, r g = 1 k , l = 3.5 mh, starting t c = 150 c e as 158 mj thermal characteristics thermal resistance, junction ? to ? case r jc 1.0 c/w thermal resistance, junction ? to ? ambient (note 1) r ja 62.5 c/w maximum temperature for soldering purposes, 1/8 from case for 5 seconds (note 2) t l 275 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. for further details, see soldering and mounting techniques reference manual: solderrm/d. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics (note 3) collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 175 c 430 450 470 v i c = 10 ma t j = ? 40 c to 175 c 450 475 500 i c = 12 a, l = 3.5 mh, r g = 1 k (note 4) t j = ? 40 c to 175 c 420 450 480 collector ? emitter leakage current i ces v ce = 15 v, v ge = 0 v t j = 25 c 0.002 1.0 a v ce = 250 v, r g = 1 k t j = ? 40 c to 175 c 0.5 2.0 100 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 30 33 39 v t j = 175 c 31 35 40 t j = ? 40 c 30 31 37 reverse collector ? emitter leakage current i ces(r) v ce = ? 24 v t j = 25 c ? 0.4 1.0 ma t j = 175 c ? 20 35 t j = ? 40 c ? 0.04 0.2 gate ? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 175 c 12 12.5 14 v gate ? emitter leakage current i ges v ge = 5.0 v t j = ? 40 c to 175 c 200 316 350 a gate resistor r g t j = ? 40 c to 175 c 70 gate ? emitter resistor r ge t j = ? 40 c to 175 c 14.25 16 25 k on characteristics (note 3) gate threshold voltage v ge(th) i c = 1.0 ma, v ge = v ce t j = 25 c 1.5 1.8 2.1 v t j = 175 c 0.7 1.0 1.3 t j = ? 40 c 1.7 2.0 2.3 threshold temperature coefficient (negative) 4.0 4.6 5.2 mv/ c collector ? to ? emitter on ? voltage v ce(on) i c = 10 a, v ge = 3.7 v t j = ? 40 c to 175 c 0.8 1.11 1.97 v i c = 10 a, v ge = 4.0 v t j = ? 40 c to 175 c 0.8 1.10 1.85 i c = 15 a, v ge = 4.0 v t j = ? 40 c to 175 c 0.8 1.24 2.00 forward transconductance gfs i c = 6.0 a, v ce = 5.0 v t j = 25 c 10 19 25 mhos dynamic characteristics (note 3) input capacitance c iss f = 10 khz, v ce = 25 v t j = 25 c 1100 1400 1600 pf output capacitance c oss 50 65 80 transfer capacitance c rss 15 20 25
NGB8245N http://onsemi.com 3 electrical characteristics characteristic unit max typ min temperature test conditions symbol switching characteristics (note 3) turn ? on delay time (resistive) 10% v ge to 10% i c t d(on)r v cc = 14 v, r l = 1.0 , r g = 1.0 k , v ge = 5.0 v t j = ? 40 c to 175 c 0.1 1.0 2.0 s rise time (resistive) 10% i c to 90% i c t rr t j = ? 40 c to 175 c 1.0 3.4 6.0 turn ? off delay time (resistive) 90% v ge to 90% i c t d(off)r v cc = 14 v, r l = 1.0 , r g = 1.0 k , v ge = 5.0 v t j = ? 40 c to 175 c 2.0 4.5 8.0 s fall time (resistive) 90% i c to 10% i c t fr t j = ? 40 c to 175 c 3.0 8.0 12 turn ? off delay time (inductive) 90% v ge to 90% i c t d(off)l v ce = bv ces , l = 0.5mh, r g = 1.0 k , i c = 10 a, v ge = 5.0 v t j = ? 40 c to 175 c 6.5 9.7 12.5 s fall time (inductive) 90% i c to 10% i c t fl t j = ? 40 c to 175 c 6.0 8.3 11 3. electrical characteristics at temperature other than 25 c, dynamic and switching characteristics are not subject to production testing. 4. not subject to production testing.
NGB8245N http://onsemi.com 4 typical electrical characteristics figure 1. self clamped inductive switching figure 2. open secondary avalanche current vs. temperature figure 3. collector ? to ? emitter voltage vs. junction temperature figure 4. collector current vs. collector ? to ? emitter voltage figure 5. collector current vs. collector ? to ? emitter voltage figure 6. collector current vs. collector ? to ? emitter voltage inductor (mh) 250 068 4 100 50 200 0 400 150 10 t j = 25 c scis energy (mj) t j , junction temperature ( c) ? 50 50 75 25 0 100 ? 25 125 10 20 5 15 0 25 30 175 v cc = 14 v v ge = 5.0 v r g = 1000 l = 10 mh 150 l = 3.0 mh l = 1.8 mh i a , avalanche current (a) 1.25 t j , junction temperature ( c) v ce , collector to emitter voltage (v) ? 50 50 75 25 0 100 ? 25 125 0.5 1.5 0.25 1.0 0.0 1.75 2.0 0.75 150 v ge = 4.5 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 7.5 a 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 175 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = ? 40 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 40 10 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 25 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 06 4 v cc = 14 v v ge = 5.0 v r g = 1000 350 300 2 t j = 175 c 175
NGB8245N http://onsemi.com 5 typical electrical characteristics t j , junction temperature ( c) gate threshold voltage (v) ? 50 75 100 25 0 125 ? 25 175 mean + 4 mean ? 4 mean v ge , gate to emitter voltage (v) 1.50 0.25 0 2.50 0.75 1.25 2.00 10000 1000 100 10 0.1 6 4 0 8 10 12 figure 7. transfer characteristics figure 8. collector ? to ? emitter leakage current vs. temperature figure 9. gate threshold voltage vs. temperature figure 10. capacitance vs. collector ? to ? emitter voltage figure 11. resistive switching fall time vs. temperature t j , junction temperature ( c) figure 12. inductive switching fall time vs. temperature t j , junction temperature ( c) collector to emitter leakage current ( a) switching time ( s) 050 25 ? 25 125 175 t j = 175 c 75 100 150 50 75 25 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a l = 300 h v ce = 200 v 1.5 3 3.5 2.5 4 2 0.5 20 10 40 0 30 0 v ce = 5 v i c , collector current (a) 1.0 50 150 0.50 1.00 1.75 2.25 2 125 t delay 10000 1000 100 10 0.1 v ce , collector to emitter voltage (v) c, capacitance (pf) 015 525 10 20 c rss c iss c oss 1.0 6 4 0 8 10 12 t j , junction temperature ( c) switching time ( s) 75 50 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a r l = 33 2 25 125 t delay 25 15 45 5 35 1 t j = ? 40 c t j = 25 c ? 50 v ce = ? 24 v
NGB8245N http://onsemi.com 6 0.000001 0.001 0.0001 0.1 100 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) 110 100 1000 0.1 figure 13. minimum pad transient thermal resistance (non ? normalized junction ? to ? ambient) 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,time (s) r jc (t), transient thermal resistance ( c/watt) 1 0.1 figure 14. best case transient thermal resistance (non ? normalized junction ? to ? case mounted on cold plate) 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) for d=1: r jc r(t) for t 0.1 s p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r jc (t)
NGB8245N http://onsemi.com 7 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b style 4: pin 1. gate 2. collector 3. emitter 4. collector w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f p u view w ? w d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NGB8245N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
